PART |
Description |
Maker |
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY57V28820HCLT-8I HY57V28820HCLT-HI HY57V28820HCLT |
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 SDRAM - 128Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd. Omron Electronics, LLC SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
HYB39L256160AC-7.5 HYB39L256160AT-7.5 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 |
16M x 72, SDR SDRAM MCP 16M X 72 SYNCHRONOUS DRAM, PBGA219 PLASTIC, PBGA-219
|
http:// Austin Semiconductor, Inc Micross Components
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
HY57V561620 HY57V561620LT-8 HY57V561620LT-P HY57V5 |
4Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor, Inc. HYNIX[Hynix Semiconductor]
|
K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KM48S16030B KM48S16030BT-G_F10 KM48S16030BT-G_F8 K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM4米8位4银行同步DRAM LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. Electronic Theatre Controls, Inc.
|
K4M51323PI-HG750 K4M51323PG-HG750 |
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE AND HALOGEN FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 HALOGEN FREE AND ROHS COMPLIANT, FBGA-90
|
Elite Semiconductor Memory Technology, Inc.
|